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Article-No.:
276905
Manufacturer-No.:
M321R4GA3EB0-CWM
EAN/GTIN:
Technical specifications
General
Packaged Quantity
1
RAM
Type
DRAM
Technology
DDR5 SDRAM
Data Integrity Check
ECC
Supply Voltage
1.1
Form Factor
DIMM 288-pin
Memory Speed
5600 MHz
CAS Latency
CL46
Memory Specification Compliance
PC5-44800
Chips Organization
X8
Registered or Buffered
Registered
RAM Features
Dual rank
Storage Capacity
32 GB
Product Type
Memory module
Description
The Samsung M321R4GA3EB0-CWM memory module offers performance with a storage capacity of 32 GB, making it suitable for those needing high-speed memory. Featuring DDR5 technology, this memory operates at a speed of 5600 MHz, ensuring efficient data processing for demanding applications. With a dual rank configuration and registered design, this memory module is built for stability and optimal performance, suitable for gaming, content creation, and heavy multitasking environments.
- High capacity for demanding applications
With a storage capacity of 32 GB, this memory module allows for extensive multitasking and handling of resource-intensive applications, providing a smoother experience for users. - High-speed performance
Operating at 5600 MHz, this memory module delivers rapid data transfer rates, contributing to faster load times and improved system responsiveness. - Enhanced stability
The registered design of the memory module ensures improved reliability during high-performance applications, reducing possible errors and system crashes. - Advanced DDR5 technology
Utilizing DDR5 SDRAM, this memory module offers improvements over its predecessors, supporting higher bandwidth and power efficiency. - Data integrity assurance
The ECC feature actively checks for and corrects data corruption, ensuring reliable operation in critical computing environments.
There is no liability or guarantee that all information is complete, correct and up to date at all times.