GIGABYTE SSD AG470E1TB - 1 TB - M.2 2280 - PCIe 4.0 x4 NVMe

GIGABYTE SSD AG470E1TB - 1 TB - M.2 2280 - PCIe 4.0 x4 NVMe_thumb_3

GIGABYTE SSD AG470E1TB - 1 TB - M.2 2280 - PCIe 4.0 x4 NVMe_1

GIGABYTE SSD AG470E1TB - 1 TB - M.2 2280 - PCIe 4.0 x4 NVMe_2

GIGABYTE SSD AG470E1TB - 1 TB - M.2 2280 - PCIe 4.0 x4 NVMe_3

Article-No.:

276656

Manufacturer-No.:

AG470E1TB

EAN/GTIN:

4719331872090

WEEE-No.

DE74106091

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Technical specifications

General

Packaged Quantity

Hard Drive

Capacity

1 TB

Internal Data Rate

7100 MBps

Form Factor

M.2 2280

Hard Drive Type

Internal hard drive

Form Factor (Short)

M.2

Interface

PCI Express 4.0 x4 (NVMe)

Internal Data Rate (Write)

6100 MBps

NAND Flash Memory Type

3D quad-level cell (QLC)

SSD Endurance

700 TB

Dimensions & Weight

Width

22 mm

Depth

80 mm

Height

2,3 mm

Service & Support

Type

5-year warranty

Description

The GIGABYTE AORUS Gen4 7000E is designed to enhance data performance with its internal data rate of 7100 MBps. This internal solid state drive features a compact M.2 2280 form factor, suitable for a variety of applications. It supports technologies like NVM Express (NVMe) 1.4, ensuring efficient data transfer speeds and reliability. With support for DMA, TRIM, and Over Provision, it enhances the overall storage experience, balancing speed and endurance. Built with a 3D quad-level cell (QLC) NAND flash memory type, this drive is engineered for high performance and longevity, making it a choice for gamers and professionals looking to maximize their system capabilities.

High-speed performance
With an internal data rate of 7100 MBps, the GIGABYTE AORUS Gen4 7000E is designed for rapid data transfer, enhancing overall efficiency in various applications.
Compact design
The M.2 2280 form factor allows for easy installation in compatible devices, offering a space-saving solution without sacrificing performance.
Advanced data management
Featuring support for NVM Express (NVMe) 1.4, along with DMA and TRIM, this drive optimizes data management and prolongs its lifespan.
Reliable endurance
With a Mean Time Between Failures (MTBF) of 1,600,000 hours, users can rely on this drive for consistent performance over extended periods.
Efficient storage technology
Utilizing 3D quad-level cell (QLC) NAND flash memory, this solid state drive balances performance and capacity, making it suitable for a variety of workloads.

Information on Product Safety

Manufacturer information

Company Name

Giga-Byte Technology Co. Ltd. (USD)

Address

No. 6, Baoqiang Rd., Xindian Dist.

23144 New Taipei City TW

alex.lien@giga-byte.nl

EU Responsible Person

Name

GBT Technologie Trading GmbH

Address

Am Stadtrand 63

22047 Hamburg DE

alex.lien@giga-byte.nl